Please use this identifier to cite or link to this item: http://arks.princeton.edu/ark:/88435/dsp015x21tj08v
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dc.contributor.authorRose, Brendon C.-
dc.contributor.otherElectrical Engineering Department-
dc.date.accessioned2017-12-12T19:14:55Z-
dc.date.available2017-12-12T19:14:55Z-
dc.date.issued2017-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/dsp015x21tj08v-
dc.description.abstractThis thesis is focused on the characterization of highly coherent defects in both silicon and diamond, particularly in the context of quantum memory applications. The results are organized into three parts based on the spin system: phosphorus donor electron spins in silicon, negatively charged nitrogen vacancy color centers in diamond (NV-), and neutrally charged silicon vacancy color centers in diamond (SiV0). The first part on phosphorus donor electron spins presents the first realization of strong coupling with spins in silicon. To achieve this, the silicon crystal was made highly pure and highly isotopically enriched so that the ensemble dephasing time, T2*, was long (10 µs). Additionally, the use of a 3D resonator aided in realizing uniform coupling, allowing for high fidelity spin ensemble manipulation. These two properties have eluded past implementations of strongly coupled spin ensembles and have been the limiting factor in storing and retrieving quantum information. Second, we characterize the spin properties of the NV- color center in diamond in a large magnetic field. We observe that the electron spin echo envelope modulation originating from the central 14N nuclear spin is much stronger at large fields and that the optically induced spin polarization exhibits a strong orientation dependence that cannot be explained by the existing model for the NV- optical cycle, we develop a modification of the existing model that reproduces the data in a large magnetic field. In the third part we perform characterization and stabilization of a new color center in diamond, SiV0, and find that it has attractive, highly sought-after properties for use as a quantum memory in a quantum repeater scheme. We demonstrate a new approach to the rational design of new color centers by engineering the Fermi level of the host material. The spin properties were characterized in electron spin resonance, revealing long spin relaxation and spin coherence times at cryogenic temperature. Additionally, we observe that the optical emission is highly coherent, predominately into a narrow zero phonon line that is stable in frequency. The combination of coherent optical and spin degrees of freedom has eluded all previous solid state defects.-
dc.language.isoen-
dc.publisherPrinceton, NJ : Princeton University-
dc.relation.isformatofThe Mudd Manuscript Library retains one bound copy of each dissertation. Search for these copies in the library's main catalog: <a href=http://catalog.princeton.edu> catalog.princeton.edu </a>-
dc.subjectdonor in silicon-
dc.subjectelectron spin resonance-
dc.subjectquantum communication-
dc.subjectquantum memory-
dc.subjectsilicon vacancy-
dc.subjectstrong coupling-
dc.subject.classificationQuantum physics-
dc.subject.classificationCondensed matter physics-
dc.titleSPIN AND OPTICAL CHARACTERIZATION OF DEFECTS IN GROUP IV SEMICONDUCTORS FOR QUANTUM MEMORY APPLICATIONS-