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|Title:||Measuring the Effect of Interface Roughness in InGaAs/AlInAs|
|Abstract:||The goal was to characterize the effect of interface roughness on light absorption in InGaAs/AlInAs. Interface roughness between two different materials stems from the semiconductor growing process and affects the wavelengths absorbed. Although no legitimate results were obtained, there is reason to believe that interface roughness broadens the spectrum of absorbed light based on previous similar experiments performed with GaN.|
|Type of Material:||Princeton University Senior Theses|
|Appears in Collections:||Electrical Engineering, 1932-2017|
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|PUTheses2015-Klosowiak_Adam.pdf||5.8 MB||Adobe PDF||Request a copy|
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