Please use this identifier to cite or link to this item:
|Title:||Measuring the Effect of Interface Roughness in InGaAs/AlInAs|
|Abstract:||The goal was to characterize the effect of interface roughness on light absorption in InGaAs/AlInAs. Interface roughness between two different materials stems from the semiconductor growing process and affects the wavelengths absorbed. Although no legitimate results were obtained, there is reason to believe that interface roughness broadens the spectrum of absorbed light based on previous similar experiments performed with GaN.|
|Type of Material:||Princeton University Senior Theses|
|Appears in Collections:||Electrical Engineering, 1932-2016|
Files in This Item:
|PUTheses2015-Klosowiak_Adam.pdf||5.8 MB||Adobe PDF||Request a copy|
Items in Dataspace are protected by copyright, with all rights reserved, unless otherwise indicated.