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Please use this identifier to cite or link to this item: http://arks.princeton.edu/ark:/88435/dsp01v118rg84p
Title: Measuring the Effect of Interface Roughness in InGaAs/AlInAs
Authors: Klosowiak, Adam
Advisors: Gmachl, Claire
Department: Electrical Engineering
Class Year: 2015
Abstract: The goal was to characterize the effect of interface roughness on light absorption in InGaAs/AlInAs. Interface roughness between two different materials stems from the semiconductor growing process and affects the wavelengths absorbed. Although no legitimate results were obtained, there is reason to believe that interface roughness broadens the spectrum of absorbed light based on previous similar experiments performed with GaN.
Extent: 23 pages
URI: http://arks.princeton.edu/ark:/88435/dsp01v118rg84p
Type of Material: Princeton University Senior Theses
Language: en_US
Appears in Collections:Electrical Engineering, 1932-2016

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