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Title: Few-electron Qubits in Silicon Quantum Electronic Devices
Authors: Wang, Ke
Advisors: Petta, Jason R
Contributors: Physics Department
Keywords: Lifetime
Quantum Bit
Subjects: Physics
Condensed matter physics
Quantum physics
Issue Date: 2014
Publisher: Princeton, NJ : Princeton University
Abstract: Artificial two-level quantum systems are widely investigated as the fundamental building blocks of future quantum computers. These quantum bits (qubits) can be realized in many solid state systems, including Josephson junction based devices, nitrogen vacancy centers in diamond, and electron spins in semiconductor quantum dots. Among these systems, Si is very promising since it can be isotopically purified to eliminate random fluctuating hyperfine fields from lattice nuclei, leading to ultra-long quantum coherence times. However, lower heterostructure quality, higher electron effective mass and valley degeneracy present many challenges in realizing high quality qubits in Si. This thesis demonstrates consistent realization of robust single-electron silicon qubits with high yield. With optimized device designs and DC/RF measurement techniques developed at Petta lab in Princeton University, we have achieved versatile quantum control of a single electron, as well as sensitive read-out of its quantum state. By applying microwave radiation to the gate electrodes, we can probe the energy level structure of the system with 1 μeV resolution. We apply bursts of microwave radiation to extract the qubit lifetime, T1. By experimentally tuning the qubit, we demonstrate a four order of magnitude variation of T1 with gate voltage. We show that our experimental results are consistent with a theory that takes into account phonon-mediated charge relaxation.
Alternate format: The Mudd Manuscript Library retains one bound copy of each dissertation. Search for these copies in the library's main catalog
Type of Material: Academic dissertations (Ph.D.)
Language: en
Appears in Collections:Physics

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